Unlock the visible spectrum
Opnovix’s Native InGaN® platform brings new freedom to LED and visible laser design.
THE MATERIAL PLATFORM
Native InGaN®: Opnovix’s engineered III-nitride lattice platform.
Strain freedom
A relaxed InGaN foundation reduces lattice mismatch, giving engineers more control over active region design.
Bandgap freedom
Reach longer wavelengths at the same temperature, or grow the same color hotter to support higher crystal quality.
Substrate freedom
Planar, substrate-agnostic InGaN grown by MOCVD on sapphire, silicon and free-standing GaN.
APPLICATIONS
More efficient LEDs. New laser wavelengths.
LEDs & lighting
Conventional blue LEDs lose efficiency at high current. Our first device program targets “no-droop” operation for powerful, compact light sources. Our long-term ambition is to meet the U.S. Dept. of Energy’s 2035 targets for energy savings in lighting.
Displays & microLEDs
We are developing a common III-nitride platform for efficient green and true III-nitride red emitters, targeting brighter microLED displays and compact RGB light engines for AR.
Visible lasers
Native InGaN® expands the design options for new III-nitride laser wavelengths. Our roadmap starts with edge-emitting laser diodes for compact RGB engines, with visible VCSELs as a longer-term goal.
III-nitride RGB VCSELs
Native InGaN® is the material foundation for developing red, green and blue III-nitride VCSELs. Our published architectures support a longer-term vision of individual emitters and integrated light engines for AR, projection and other applications.
MATERIALS PROOF
Change the lattice.
Change the light.
The lattice change has a measurable optical effect. Matched growths show longer-wavelength emission on Native InGaN®, with the option to grow the same color hotter.
THE OPTICAL RESULT
Longer-wavelength emission
Matched quantum-well growths produce longer-wavelength photoluminescence on Native InGaN® than on GaN.
<!- chart ->
THE MATERIAL FOUNDATION
Relaxed, single-crystal InGaN. Planar epitaxy.
X-ray diffraction verifies the relaxed InGaN lattice. Planar MOCVD-grown layers support subsequent device epitaxy.
<!- chart ->
Why opnovix
Device expertise.
Defensible technology
Expertise
Decades of experience in III-nitride epitaxy, emitter development and semiconductor commercialization.
Proprietary IP
More than 30 patent filings and proprietary process know-how cover the lattice platform, device structures and applications.
Industry collaboration
We welcome discussions with device manufacturers about evaluating Native InGaN® for next-generation products.
